Manufacturer Part Number
MRF9060LSR1
Manufacturer
NXP Semiconductors
Introduction
High-power LDMOS transistor for RF power amplifier applications
Product Features and Performance
60W output power
17dB gain
Operates at 945MHz frequency
Test current of 450mA
Rated voltage of 65V
Test voltage of 26V
Product Advantages
High power and efficiency
Suitable for RF power amplifier designs
Reliable LDMOS technology
Key Technical Parameters
Power output: 60W
Gain: 17dB
Frequency: 945MHz
Current: 450mA
Voltage: 65V (rated), 26V (test)
Quality and Safety Features
RoHS3 compliant
Reliable LDMOS technology
Compatibility
Chassis mount package (NI-360S)
Tape & reel (TR) packaging
Application Areas
RF power amplifiers
Wireless communications equipment
Industrial, scientific, and medical (ISM) applications
Product Lifecycle
Current production model, no discontinuation plans
Replacement and upgrade options available from NXP
Key Reasons to Choose
High power output and efficiency
Reliable LDMOS technology
Suitable for RF power amplifier designs
RoHS3 compliance
Available in compatible packaging options
