Manufacturer Part Number
MRF9060NR1
Manufacturer
NXP Semiconductors
Introduction
High-power LDMOS RF power transistor designed for use in industrial, scientific and medical (ISM) equipment
Product Features and Performance
60W output power
18dB power gain
65V rated voltage
945MHz frequency
Surface mount packaging
Product Advantages
Robust and reliable LDMOS technology
Suited for high-power ISM applications
Efficient and high-performance RF operation
Key Technical Parameters
Power Output: 60W
Current (test): 450mA
Voltage (rated): 65V
Gain: 18dB
Voltage (test): 26V
Frequency: 945MHz
Mounting Type: Surface Mount
Quality and Safety Features
RoHS non-compliant
Compatibility
TO-270AA package
Application Areas
Industrial, scientific and medical (ISM) equipment
Product Lifecycle
Actively supported by the manufacturer
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Robust and reliable LDMOS technology
High power output and efficiency for ISM applications
Proven performance and suitability for the target applications
Availability of compatible packaging and mounting options
