Manufacturer Part Number
MRF9045LR1
Manufacturer
NXP Semiconductors
Introduction
High-performance, high-power LDMOS RF transistor for wireless communication systems
Product Features and Performance
High output power up to 45W
Excellent power gain of 18.8dB
Wide operating frequency range up to 945MHz
Robust LDMOS technology for reliable operation
High voltage rating of 65V
Product Advantages
Optimized for efficient and high-power RF amplifier design
Suitable for various wireless applications like base stations, repeaters, and radar systems
Proven reliability and longevity in demanding operating conditions
Key Technical Parameters
Power Output: 45W
Test Current: 350mA
Rated Voltage: 65V
Power Gain: 18.8dB
Test Voltage: 28V
Frequency: 945MHz
Mounting Type: Chassis Mount
Quality and Safety Features
RoHS3 compliant
NI-360 packaging for secure handling and transportation
Compatibility
Compatible with various RF power amplifier designs and wireless communication systems
Application Areas
Cellular base stations
Wireless repeaters and boosters
Radar systems
High-power RF amplifiers
Product Lifecycle
This product is an active and widely-used LDMOS transistor in the industry
Replacement and upgrade options are available from NXP Semiconductors
Key Reasons to Choose This Product
Exceptional power handling capability up to 45W
Superior power gain performance of 18.8dB
Wide operational frequency range up to 945MHz
Proven reliability and longevity of LDMOS technology
RoHS3 compliance for environmental responsibility
Readily available in NI-360 packaging for ease of use