Manufacturer Part Number
MRF1535NT1
Manufacturer
NXP Semiconductors
Introduction
High-performance RF LDMOS transistor for industrial, scientific and medical (ISM) applications
Product Features and Performance
High power output of 35W
Wideband operation from 450 to 470 MHz
High efficiency and gain of 13.5 dB
Suitable for industrial, scientific and medical (ISM) applications
Product Advantages
Reliable performance in harsh operating conditions
Cost-effective solution for high-power RF applications
Easy to integrate into RF circuits and systems
Key Technical Parameters
Power Output: 35W
Current: 500 mA test current
Voltage: 40V rated, 12.5V test voltage
Gain: 13.5 dB
Frequency: 520 MHz
Current Rating: 6A
Quality and Safety Features
RoHS3 compliant
Chassis mount package for secure installation
Compatibility
Compatible with industrial, scientific and medical (ISM) applications
Application Areas
RF power amplifiers
Industrial, scientific and medical (ISM) equipment
Wireless communication systems
Product Lifecycle
This product is currently in production and available
No known plans for discontinuation or replacement
Several Key Reasons to Choose This Product
High power output of 35W for demanding applications
Wideband operation from 450 to 470 MHz for flexibility
High efficiency and gain for improved system performance
Reliable performance in harsh operating conditions
Cost-effective solution for high-power RF applications
Easy to integrate into RF circuits and systems