Manufacturer Part Number
MRF1513NT1
Manufacturer
NXP Semiconductors
Introduction
NXP MRF1513NT1 is a discrete MOSFET transistor designed for radio frequency (RF) applications.
Product Features and Performance
High power output of 3 watts
Operates at a frequency of 520 MHz
Gain of 15 dB
Rated voltage of 40 V
Test current of 50 mA
Test voltage of 12.5 V
Current rating of 2 A
Surface mount package (PLD-1.5)
Product Advantages
Suitable for high-frequency RF applications
Provides high power output
Excellent gain and efficiency
Compact surface mount package
Key Technical Parameters
Technology: LDMOS
Packaging: PLD-1.5, Tape & Reel (TR)
RoHS compliance: RoHS3 Compliant
Quality and Safety Features
Reliable performance under high-frequency and high-power conditions
Compliance with RoHS regulations for environmental safety
Compatibility
Suitable for a variety of RF-based applications, such as transmitters, amplifiers, and power conversion circuits
Application Areas
Radio frequency (RF) power amplifiers
Wireless communication systems
Broadcast equipment
Industrial and scientific instrumentation
Product Lifecycle
The MRF1513NT1 is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from NXP Semiconductors, but specific information should be verified with the manufacturer.
Several Key Reasons to Choose This Product
High-power output capability for demanding RF applications
Excellent gain and efficiency performance
Compact surface mount package for space-constrained designs
Reliable operation and compliance with environmental regulations
Suitability for a wide range of RF-based applications