Manufacturer Part Number
MRF13750HR5
Manufacturer
NXP Semiconductors
Introduction
High power LDMOS RF power transistor for wireless infrastructure applications
Product Features and Performance
650W output power
6dB gain
105V rated voltage
Operates at 700MHz to 1.3GHz frequency range
10A current rating
Product Advantages
Robust and reliable performance
High efficiency
Suitable for a wide range of wireless infrastructure applications
Key Technical Parameters
Power output: 650W
Voltage rating: 105V
Gain: 20.6dB
Operating frequency: 700MHz to 1.3GHz
Current rating: 10A
Quality and Safety Features
RoHS3 compliant
Reliable NI-1230-4H package
Compatibility
Suitable for wireless infrastructure applications such as cellular base stations, broadcast transmitters, and radar systems
Application Areas
Cellular base stations
Broadcast transmitters
Radar systems
Other wireless infrastructure applications
Product Lifecycle
This product is an active and widely used part in the market
Replacement or upgrade options are available from NXP Semiconductors
Key Reasons to Choose This Product
High power output of 650W
Excellent gain of 20.6dB
Wide operating frequency range of 700MHz to 1.3GHz
Robust and reliable performance in harsh operating conditions
RoHS3 compliance for environmental sustainability
Readily available and supported by the manufacturer