MRF1518NT1 - NXP USA Inc.

Manufacturer Part Number

MRF1518NT1

Manufacturer

NXP Semiconductors

Introduction

The MRF1518NT1 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF power transistor designed for use in various RF power amplifier applications.

Product Features and Performance

8W output power

13dB gain

Operates at 520MHz frequency

Supports up to 4A current rating

Capable of 40V voltage rating

Product Advantages

High power and efficiency

Reliable LDMOS technology

Suitable for various RF power amplifier applications

Key Technical Parameters

Power Output: 8W

Gain: 13dB

Frequency: 520MHz

Current Rating: 4A

Voltage Rating: 40V

Quality and Safety Features

RoHS3 compliant

Packaged in PLD-1.5 surface mount format

Compatibility

Compatible with various RF power amplifier designs and systems

Application Areas

Suitable for use in RF power amplifier circuits, including those found in communication systems, broadcasting equipment, and industrial applications.

Product Lifecycle

This product is currently in active production and there are no indications of it being discontinued in the near future.

Replacement or upgrade options may be available from NXP Semiconductors as technology evolves.

Key Reasons to Choose This Product

High power and efficiency for improved performance in RF power amplifier applications

Reliable LDMOS technology for long-term durability and stability

Compact surface mount package for easy integration into various circuit designs

Broad compatibility with different RF power amplifier systems and applications