Manufacturer Part Number
FDS4935A
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 P-Channel (Dual) configuration
30V Drain to Source Voltage (Vdss)
23mOhm Max Rds On @ 7A, 10V
900mW Max Power
-55°C ~ 175°C Operating Temperature Range
7A Continuous Drain Current (Id) @ 25°C
1233pF Max Input Capacitance (Ciss) @ 15V
21nC Max Gate Charge (Qg) @ 5V
Logic Level Gate FET Feature
Product Advantages
High power density
Low on-resistance
Wide operating temperature range
Suitable for various power management applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Quality and Safety Features
MOSFET (Metal Oxide) technology
Surface Mount Mounting Type
8-SOIC (0.154", 3.90mm Width) Package
Compatibility
PowerTrench Series
8-SOIC (0.154", 3.90mm Width) Package
Application Areas
Power management
Switching circuits
Motor control
Industrial and consumer electronics
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
High power density
Low on-resistance
Wide operating temperature range
Suitable for various power management applications
Proven MOSFET technology
Compact and versatile 8-SOIC package
