Manufacturer Part Number
FDS4935A
Manufacturer
onsemi
Introduction
Dual P-Channel Enhancement Mode Power MOSFET
Product Features and Performance
30V Drain-to-Source Voltage (Vdss)
23mΩ Maximum On-Resistance (RDS(on))
7A Continuous Drain Current (ID)
1233pF Maximum Input Capacitance (Ciss)
21nC Maximum Gate Charge (Qg)
Logic Level Gate (Vgs(th) = 3V)
-55°C to 175°C Operating Temperature Range
900mW Maximum Power Dissipation
Product Advantages
Excellent on-resistance and low gate charge for efficient power conversion
Logic-level gate for direct microcontroller interface
Compact 8-SOIC surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
On-Resistance (RDS(on)): 23mΩ @ 7A, 10V
Drain Current (ID): 7A Continuous @ 25°C
Input Capacitance (Ciss): 1233pF @ 15V
Gate Charge (Qg): 21nC @ 5V
Gate Threshold Voltage (Vgs(th)): 3V @ 250μA
Quality and Safety Features
RoHS 3 Compliant
AEC-Q101 Qualified
Compatibility
Compatible with various power supply, motor control, and general switching applications
Application Areas
Power supplies
DC-DC converters
Motor drivers
General switching applications
Product Lifecycle
Currently in active production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power handling capability
Compact and easy to integrate 8-SOIC package
Logic-level gate for simple microcontroller interfacing
Wide operating temperature range of -55°C to 175°C
RoHS 3 compliance and AEC-Q101 qualification for reliable performance
FDS4935A-NLVBSEMI