Manufacturer Part Number
FDS4935BZ
Manufacturer
onsemi
Introduction
The FDS4935BZ is a dual P-channel PowerTrench MOSFET that offers high performance and efficiency in a compact 8-SOIC package.
Product Features and Performance
Operates over a wide temperature range of -55°C to 150°C
Provides a maximum drain current of 6.9A at 25°C
Features low on-resistance of 22mΩ at 10V gate-source voltage
Offers low input capacitance of 1360pF at 15V drain-source voltage
Supports a maximum drain-source voltage of 30V
Product Advantages
Compact 8-SOIC package
High power density and efficiency
Suitable for a wide range of applications
Key Technical Parameters
Package: 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Current Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Quality and Safety Features
ROHS3 Compliant
Suitable for surface mount applications
Compatibility
Compatible with various electronic devices and circuits
Application Areas
Suitable for a wide range of power management and control applications, such as DC-DC converters, motor drives, and power supplies
Product Lifecycle
Currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High power density and efficiency
Compact 8-SOIC package
Wide operating temperature range of -55°C to 150°C
Low on-resistance and input capacitance for improved performance
Suitable for a variety of power management and control applications
FDS4935A-NLVBSEMI