KSD2012GTU - Fairchild Semiconductor

Manufacturer Part Number

KSD2012GTU

Manufacturer

Fairchild (onsemi)

Introduction

High-performance NPN bipolar junction transistor (BJT)

Designed for a wide range of power amplifier and switching applications

Product Features and Performance

High power handling capability up to 25 watts

Wide collector-emitter breakdown voltage up to 60 volts

High DC current gain up to 150

High frequency performance with transition frequency up to 3 MHz

Low collector-emitter saturation voltage of 1V @ 2A collector current

Product Advantages

Reliable and robust design for demanding applications

Excellent thermal management due to TO-220 package

Suitable for both analog and digital circuit designs

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 60 V

Collector Current (IC): 3 A

Collector Cutoff Current (ICBO): 100 μA

DC Current Gain (hFE): 150 min

Transition Frequency (fT): 3 MHz

Quality and Safety Features

Meets strict quality and reliability standards

Suitable for industrial, consumer, and automotive applications

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power amplifiers

Switching circuits

Motor control

Industrial controls

Automotive electronics

Product Lifecycle

Currently in active production

Replacement parts and upgrades are available

Several Key Reasons to Choose This Product

Reliable and robust performance for demanding applications

Excellent power handling and voltage capabilities

High frequency operation suitable for various circuit designs

Proven track record in industrial, consumer, and automotive sectors

Easily accessible replacement parts and upgrade options