KSD1691YS - onsemi

Manufacturer Part Number

KSD1691YS

Manufacturer

onsemi

Introduction

The KSD1691YS is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of power amplification and switching applications.

Product Features and Performance

High collector-emitter breakdown voltage of 60V

High collector current rating of 5A

Low saturation voltage of 300mV @ 2A collector current

Wide operating temperature range up to 150°C

Robust through-hole TO-126-3 package

Product Advantages

Excellent power handling capability

High reliability and ruggedness

Suitable for high-power switching and amplification circuits

Versatile applications across various industries

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 60V

Current Collector (Ic) (Max): 5A

Current Collector Cutoff (Max): 10A

Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A

Transistor Type: NPN

DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2A, 1V

Quality and Safety Features

RoHS3 compliant

Reliable through-hole TO-126-3 package

Compatibility

Suitable for a wide range of power amplification and switching applications

Application Areas

Power amplifiers

Motor controls

Switching regulators

High-power audio circuits

Industrial control systems

Product Lifecycle

The KSD1691YS is an active product and is not nearing discontinuation.

Replacement or upgraded products may be available in the future.

Several Key Reasons to Choose This Product

Excellent power handling capability with high collector current rating

Low saturation voltage for efficient power switching

Wide operating temperature range up to 150°C

Robust and reliable through-hole package

Versatile applications across various industries