Manufacturer Part Number
KSD2012GTU
Manufacturer
onsemi
Introduction
The KSD2012GTU is a high-performance NPN bipolar junction transistor (BJT) from onsemi, suitable for a wide range of electronic applications.
Product Features and Performance
Operates at high power up to 25W
High collector-emitter breakdown voltage of 60V
High collector current capability of up to 3A
High DC current gain (hFE) of at least 150 at 500mA, 5V
High-frequency operation up to 3MHz
Product Advantages
Robust and reliable design
Excellent thermal management
High power and voltage handling capabilities
Suitable for a variety of power electronics applications
Key Technical Parameters
Power Rating: 25W
Collector-Emitter Breakdown Voltage: 60V
Collector Current: 3A
DC Current Gain (hFE): 150 (min) at 500mA, 5V
Transition Frequency: 3MHz
Quality and Safety Features
RoHS3 compliant
Packaged in a rugged TO-220F-3 housing
Compatibility
Through-hole mounting for easy installation
Application Areas
Power supplies
Motor drives
Switching circuits
Audio amplifiers
Product Lifecycle
The KSD2012GTU is an active and widely available product from onsemi. There are no indications of it being discontinued, and suitable replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Robust and reliable performance
High power and voltage handling capabilities
Excellent thermal management
Suitable for a wide range of power electronics applications
RoHS3 compliance for environmental sustainability
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