Manufacturer Part Number
KSD1691YSTU
Manufacturer
onsemi
Introduction
The KSD1691YSTU is a high-power NPN bipolar junction transistor (BJT) designed for various power amplification and switching applications.
Product Features and Performance
High power handling capability up to 1.3W
Collector-Emitter breakdown voltage up to 60V
Collector current up to 5A
Collector cutoff current up to 10A
Low saturation voltage of 300mV @ 2A collector current
High current gain of 160 min. @ 2A collector current
Product Advantages
Efficient power amplification and switching
Robust and reliable performance
Suitable for high-power applications
Key Technical Parameters
Manufacturer Part Number: KSD1691YSTU
Transistor Type: NPN
Package: TO-126-3
Operating Temperature: 150°C (TJ)
Power Dissipation: 1.3W
Collector-Emitter Breakdown Voltage: 60V
Collector Current: 5A
Collector Cutoff Current: 10A
Saturation Voltage: 300mV @ 2A Collector Current
Current Gain: 160 min. @ 2A Collector Current
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power amplification and switching applications
Application Areas
Power amplifiers
Motor drives
Switching circuits
Power supplies
Industrial controls
Product Lifecycle
The KSD1691YSTU is an active and readily available product from onsemi.
Key Reasons to Choose This Product
Excellent power handling capability up to 1.3W
High voltage and current ratings for demanding applications
Low saturation voltage for efficient power conversion
High current gain for optimal performance
Reliable and RoHS3 compliant design
Compatibility with a wide range of power applications