Manufacturer Part Number
KSA916YTA
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
TO-92-3 package
150°C max operating temperature
900 mW max power
120 V max collector-emitter breakdown voltage
800 mA max collector current
100 nA max collector cutoff current
1 V max collector-emitter saturation voltage @ 50 mA, 500 mA
PNP transistor type
100 min DC current gain @ 100 mA, 5 V
120 MHz transition frequency
Product Advantages
Reliable performance in high-temperature applications
High voltage and current handling capability
Low saturation voltage for efficient power switching
Key Technical Parameters
Power: 900 mW
Voltage: 120 V max collector-emitter breakdown
Current: 800 mA max collector, 100 nA max collector cutoff
Transistor Type: PNP
DC Current Gain: 100 min @ 100 mA, 5 V
Transition Frequency: 120 MHz
Quality and Safety Features
Designed and manufactured to high quality standards
Robust TO-92-3 package for reliable operation
Compatibility
Through-hole mounting
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Audio equipment
Industrial control systems
Product Lifecycle
Current production model
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose
Reliable high-temperature performance
High voltage and current handling
Low saturation voltage for efficient power switching
Proven track record in a variety of applications
KSA916YTAonsemiTRANS PNP 120V 0.8A TO92-3