KSA916YTA - onsemi

Manufacturer Part Number

KSA916YTA

Manufacturer

onsemi

Introduction

The KSA916YTA is a high-performance PNP bipolar junction transistor (BJT) designed for a wide range of applications, including audio amplifiers, switches, and general-purpose electronic circuits.

Product Features and Performance

Versatile PNP bipolar junction transistor (BJT)

High current handling capability up to 800 mA

Wide collector-emitter breakdown voltage of 120 V

High current gain (hFE) of at least 100 at 100 mA, 5 V

High transition frequency of 120 MHz

Low collector-emitter saturation voltage of 1 V at 50 mA, 500 mA

Operating temperature range up to 150°C (TJ)

Power dissipation of up to 900 mW

Product Advantages

Robust and reliable performance

Suitable for a wide range of applications

Excellent electrical characteristics for efficient circuit design

Compact and easy-to-use through-hole package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 120 V

Collector Current (Max): 800 mA

Collector Cutoff Current (Max): 100 nA

DC Current Gain (Min): 100 @ 100 mA, 5 V

Transition Frequency: 120 MHz

Power Dissipation (Max): 900 mW

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Suitable for industrial and commercial applications

Compatibility

Compatible with a wide range of electronic circuits and systems

Interchangeable with other similar PNP BJT transistors

Application Areas

Audio amplifiers

Switches

General-purpose electronic circuits

Industrial and commercial electronics

Product Lifecycle

This product is an active and widely available part

Replacement or upgraded parts may be available if discontinued

Key Reasons to Choose This Product

High-performance and robust PNP BJT transistor

Excellent electrical characteristics for efficient circuit design

Suitable for a wide range of applications

Reliable and long-lasting performance

RoHS3 compliance for environmental responsibility