Manufacturer Part Number
KSA812YMTF
Manufacturer
onsemi
Introduction
The KSA812YMTF is a PNP bipolar junction transistor (BJT) from onsemi, designed for small-signal amplifier and switching applications.
Product Features and Performance
150mW max power dissipation
50V max collector-emitter breakdown voltage
100mA max collector current
100nA max collector cutoff current
300mV max collector-emitter saturation voltage
135 min DC current gain
180MHz transition frequency
Product Advantages
Compact SOT-23-3 surface mount package
RoHS3 compliant
High-performance PNP BJT suitable for small-signal circuits
Key Technical Parameters
Package: SOT-23-3
Operating Temperature: 150°C (TJ)
Collector-Emitter Breakdown Voltage: 50V
Collector Current: 100mA
Collector Cutoff Current: 100nA
Collector-Emitter Saturation Voltage: 300mV
DC Current Gain: 135
Transition Frequency: 180MHz
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
The KSA812YMTF is a direct replacement for many small-signal PNP BJT transistors in SOT-23-3 packages.
Application Areas
Small-signal amplifiers
Switching circuits
General-purpose electronics
Product Lifecycle
The KSA812YMTF is an active, in-production product from onsemi. Replacement or upgrade options may be available, but the product is not nearing discontinuation.
Key Reasons to Choose This Product
High-performance PNP BJT in a compact surface mount package
Reliable and RoHS3 compliant
Suitable for a wide range of small-signal amplifier and switching applications
Direct replacement for many common PNP BJT transistors