KSA928AYTA - onsemi

Manufacturer Part Number

KSA928AYTA

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

Through-hole mounting

TO-92-3 package

Operating temperature up to 150°C

Power rating of 1W

Collector-emitter breakdown voltage up to 30V

Collector current up to 2A

Collector cutoff current up to 100nA

Saturation voltage as low as 2V @ 30mA, 1.5A

DC current gain of at least 160 @ 500mA, 2V

Transition frequency of 120MHz

Product Advantages

Robust and reliable performance

Suitable for a wide range of applications

High efficiency and thermal capabilities

Key Technical Parameters

Package: TO-226-3, TO-92-3 Long Body (Formed Leads)

Voltage Collector Emitter Breakdown (Max): 30V

Current Collector (Ic) (Max): 2A

Current Collector Cutoff (Max): 100nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A

Transistor Type: PNP

DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V

Frequency Transition: 120MHz

Quality and Safety Features

RoHS3 Compliant

Compatibility

Can be used in a wide range of electronic circuits and applications

Application Areas

Suitable for use in power supplies, amplifiers, switches, and other electronic circuits

Product Lifecycle

Currently available, no discontinuation plans known

Several Key Reasons to Choose This Product

Robust and reliable performance

Suitable for a wide range of applications

High efficiency and thermal capabilities

RoHS3 compliant

Broad compatibility and versatility