HGT1S10N120BNS - Fairchild Semiconductor

Manufacturer Part Number

HGT1S10N120BNS

Manufacturer

Fairchild (onsemi)

Introduction

High-power IGBT transistor with advanced NPT structure for high-efficiency power conversion applications.

Product Features and Performance

High voltage rating up to 1200V

High current rating up to 35A

Low on-state voltage drop of 2.7V @ 10A

Fast switching with turn-on time of 23ns and turn-off time of 165ns

High power handling capability up to 298W

Wide operating temperature range of -55°C to 150°C

Product Advantages

Efficient power conversion with low conduction and switching losses

Compact design with surface-mount TO-263AB package

Reliable and robust performance

Key Technical Parameters

IGBT Type: NPT

Voltage Collector Emitter Breakdown (Max): 1200V

Current Collector (Ic) (Max): 35A

Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A

Gate Charge: 100nC

Switching Energy: 320J (on), 800J (off)

Td (on/off) @ 25°C: 23ns/165ns

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Compatible with a wide range of power conversion applications

Application Areas

Motor drives

Power supplies

Inverters

Welding equipment

Industrial automation

Product Lifecycle

Current product, no discontinuation or replacement planned

Several Key Reasons to Choose This Product

High-performance IGBT with advanced NPT structure for efficient power conversion

Compact and reliable surface-mount package

Wide operating temperature range and high power handling capability

Fast switching with low conduction and switching losses

Proven quality and safety compliance