HGT1N30N60A4D - onsemi

Manufacturer Part Number

HGT1N30N60A4D

Manufacturer

onsemi

Introduction

High-power, high-speed IGBT module for industrial applications

Product Features and Performance

Optimized for high-speed switching and high efficiency

Rugged, high-power design

Compact SOT-227B package

Product Advantages

Excellent thermal management

High power density

Fast switching capability

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600 V

Current Collector (Ic) (Max): 96 A

Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A

Current Collector Cutoff (Max): 250 A

Quality and Safety Features

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 255 W

Compatibility

Chassis Mount

Application Areas

Industrial applications requiring high-power, high-speed switching

Product Lifecycle

Currently in active production

Replacement or upgrade options available from the manufacturer

Several Key Reasons to Choose This Product

Optimized for high-speed switching and high efficiency

Rugged, high-power design in a compact package

Excellent thermal management and high power density

Fast switching capability for industrial applications