Manufacturer Part Number
HGT1S10N120BNST
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single IGBT Transistor
Product Features and Performance
NPT IGBT technology
1200V Collector-Emitter Breakdown Voltage
35A Collector Current (Max)
298W Power Rating
Low Vce(on) of 2.7V @ 15V, 10A
Fast Switching Speed: 23ns Turn-on, 165ns Turn-off
100nC Gate Charge
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Efficient power conversion
High power density
Reliability and ruggedness
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Max): 35A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Gate Charge: 100nC
Collector Current Pulsed (Icm): 80A
Switching Energy: 320J (on), 800J (off)
Td (on/off) @ 25°C: 23ns/165ns
Quality and Safety Features
RoHS3 Compliant
DPAK (TO-263) Packaging
Compatibility
Surface Mount Package
Application Areas
Power conversion and control
Industrial motor drives
Uninterruptible power supplies
Welding equipment
Home appliances
Product Lifecycle
Current product
No discontinuation plans
Several Key Reasons to Choose This Product
High power handling capability
Efficient power conversion
Fast switching speed for high-frequency applications
Reliable and rugged design
Wide operating temperature range
HGT1S12N60C3DS9AFairchild (onsemi)