Manufacturer Part Number
HGT1S10N120BNS
Manufacturer
onsemi
Introduction
N-Channel Insulated Gate Bipolar Transistor (IGBT)
Designed for high power switching applications
Product Features and Performance
1200V Collector-Emitter Voltage Rating
35A Collector Current Rating
Low Conduction Losses
Low Switching Losses
Fast Switching Speed
Product Advantages
Optimized for high efficiency power conversion
Reliable and robust design
Compact surface-mount package
Key Technical Parameters
1200V Collector-Emitter Voltage (max)
35A Collector Current (max)
7V Collector-Emitter Saturation Voltage (max) @ 15V Gate, 10A Collector
100nC Gate Charge
-55°C to 150°C Operating Temperature Range
Quality and Safety Features
RoHS3 Compliant
DPAK (TO-263) Package
Compatibility
Compatible with various high power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
UPS systems
Product Lifecycle
This product is an active and widely available IGBT
Replacement and upgrade options are readily available
Key Reasons to Choose This Product
Excellent performance and efficiency for high power switching
Reliable and robust design for demanding applications
Compact surface-mount package for space-constrained designs
Wide operating temperature range for versatile use
RoHS3 compliance for environmentally-friendly applications