Manufacturer Part Number
FQT5P10TF
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Product Features and Performance
Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
P-Channel
Drain to Source Voltage (Vdss) of 100V
Gate to Source Voltage (Vgs) of ±30V
On-Resistance (Rds On) of 1.05Ω @ 500mA, 10V
Continuous Drain Current (Id) of 1A @ 25°C
Input Capacitance (Ciss) of 250pF @ 25V
Power Dissipation (Tc) of 2W
Gate Charge (Qg) of 8.2nC @ 10V
Operating Temperature Range of -55°C to 150°C
Product Advantages
High voltage handling capability
Low on-resistance
High current capability
Suitable for surface mount applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate to Source Voltage (Vgs): ±30V
On-Resistance (Rds On): 1.05Ω @ 500mA, 10V
Continuous Drain Current (Id): 1A @ 25°C
Input Capacitance (Ciss): 250pF @ 25V
Power Dissipation (Tc): 2W
Gate Charge (Qg): 8.2nC @ 10V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
Meets industry standard packaging and reliability requirements
Compatibility
Suitable for surface mount applications
Application Areas
Power management
Motor control
Switching circuits
General-purpose power applications
Product Lifecycle
This product is an active and available part from the manufacturer.
Several Key Reasons to Choose This Product
High voltage handling capability up to 100V
Low on-resistance for efficient power management
High current capability up to 1A
Suitable for surface mount applications
Wide operating temperature range of -55°C to 150°C
FQT4N20LTFonsemiMOSFET N-CH 200V 850MA SOT223-4