FQT7N10LTF - onsemi

Manufacturer Part Number

FQT7N10LTF

Manufacturer

onsemi

Introduction

This product is a discrete semiconductor device, specifically an N-Channel MOSFET transistor.

Product Features and Performance

Operates at a wide temperature range of -55°C to 150°C

Supports a drain-to-source voltage up to 100V

Features a low on-resistance of 350mOhm at 850mA, 10V

Provides a continuous drain current of 1.7A at 25°C case temperature

Has an input capacitance of 290pF at 25V drain-to-source voltage

Supports a maximum power dissipation of 2W at case temperature

Product Advantages

Efficient power handling and low on-resistance for improved power efficiency

Wide operating temperature range suitable for diverse applications

Robust design for reliable performance

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 350mOhm @ 850mA, 10V

Continuous Drain Current (Id): 1.7A @ 25°C

Input Capacitance (Ciss): 290pF @ 25V

Power Dissipation (Ptot): 2W @ case temperature

Quality and Safety Features

RoHS3 compliant for environmental safety

Housed in a SOT-223-4 surface mount package for reliable connections

Compatibility

Compatible with a variety of electronic circuits and systems that require an N-Channel MOSFET transistor

Application Areas

Suitable for use in power management, switching, and control circuits in various electronic applications

Product Lifecycle

This product is currently in production and readily available

Replacements or upgrades may be available in the future as technology evolves

Key Reasons to Choose This Product

Efficient power handling and low on-resistance for improved energy efficiency

Wide operating temperature range for versatile applications

Robust and reliable design for long-term performance

RoHS3 compliance for environmentally friendly use

Compact surface mount package for easy integration into electronic systems