Manufacturer Part Number
FQT4N25TF
Manufacturer
onsemi
Introduction
The FQT4N25TF is a single N-channel enhancement-mode power MOSFET transistor in a SOT-223-4 package.
Product Features and Performance
250V Drain-Source Voltage
830mA Continuous Drain Current at 25°C
75Ω On-Resistance at 415mA, 10V
200pF Input Capacitance at 25V
5W Power Dissipation
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power switching
Small surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.75Ω
Drain Current (Id): 830mA
Input Capacitance (Ciss): 200pF
Power Dissipation: 2.5W
Quality and Safety Features
RoHS3 Compliant
Operates over a wide temperature range of -55°C to 150°C
Compatibility
This MOSFET can be used in various power switching and control applications.
Application Areas
Switch-mode power supplies
Motor control
Lighting control
Industrial automation
Product Lifecycle
The FQT4N25TF is an active product and is not nearing discontinuation. Replacement or upgrade options are available.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Small surface-mount package for compact designs
Operates over a wide temperature range
RoHS3 compliance for environmental friendliness