FQT4N20LTF - onsemi

Manufacturer Part Number

FQT4N20LTF

Manufacturer

onsemi

Introduction

This product is a single N-Channel MOSFET transistor from onsemi's QFET series.

Product Features and Performance

High voltage rating of 200V drain-source voltage

Wide operating temperature range of -55°C to 150°C

Low on-resistance of 1.35Ω at 425mA and 10V gate-source voltage

High continuous drain current of 850mA at 25°C case temperature

Low input capacitance of 310pF at 25V drain-source voltage

Low gate charge of 5.2nC at 5V gate-source voltage

Product Advantages

Excellent power handling capabilities

Efficient and reliable performance

Suitable for high voltage and high current applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 200V

Gate-Source Voltage (Vgs) (Max): ±20V

On-Resistance (Rds(on)) (Max): 1.35Ω @ 425mA, 10V

Drain Current (Id) (Max): 850mA @ 25°C case temperature

Input Capacitance (Ciss) (Max): 310pF @ 25V

Power Dissipation (Max): 2.2W @ case temperature

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

This MOSFET is compatible with a wide range of high voltage, high current electronic circuits and systems.

Application Areas

Power supplies

Motor drives

Switching regulators

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and available for purchase. There are no plans for discontinuation, and compatible replacement or upgrade options are available.

Several Key Reasons to Choose This Product

High voltage and current handling capabilities for demanding applications

Efficient and reliable performance with low on-resistance and input capacitance

Wide operating temperature range for use in diverse environmental conditions

Surface mount packaging for easy integration into electronic designs

RoHS3 compliance for environmentally-conscious applications