FQT4N20LTF - Fairchild Semiconductor

Manufacturer Part Number

FQT4N20LTF

Manufacturer

Fairchild (onsemi)

Introduction

High-performance N-Channel MOSFET transistor suitable for a wide range of power management and switching applications.

Product Features and Performance

200V Drain-to-Source Voltage (Vdss)

35Ohm maximum On-State Resistance (Rds(on)) at 425mA, 10V

850mA maximum Continuous Drain Current (Id) at 25°C

310pF maximum Input Capacitance (Ciss) at 25V

2W maximum Power Dissipation at 25°C

Product Advantages

Efficient power management and switching

Low on-state resistance for minimal power loss

Reliable high-voltage operation

Wide operating temperature range

Key Technical Parameters

Vdss: 200V

Vgs(th) (Max): 2V @ 250A

Rds(on) (Max): 1.35Ohm @ 425mA, 10V

Id (Tc): 850mA

Ciss (Max): 310pF @ 25V

Power Dissipation (Max): 2.2W

Quality and Safety Features

Robust MOSFET technology

Suitable for high-temperature environments (-55°C to 150°C)

Stringent quality control and testing

Compatibility

Compatible with a wide range of power electronic applications

Application Areas

Power supplies

Motor drives

Switching regulators

Lighting ballasts

Industrial controls

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power efficiency and low power loss

Reliable high-voltage operation

Wide operating temperature range

Robust and durable design

Suitable for a variety of power management and switching applications