Manufacturer Part Number
FQP6N80C
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, N-channel power MOSFET
Product Features and Performance
Drain-to-source voltage up to 800V
Continuous drain current up to 5.5A at 25°C
Low on-resistance of 2.5Ω at 10V gate-to-source voltage
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent power handling capability
High reliability and ruggedness
Efficient power conversion
Suitable for high-voltage applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 800V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 2.5Ω @ 2.75A, 10V
Continuous drain current (Id): 5.5A at 25°C
Input capacitance (Ciss): 1310pF @ 25V
Power dissipation (Tc): 158W
Quality and Safety Features
Robust TO-220-3 package
Complies with industry standards
Tested for high reliability and long-term performance
Compatibility
Suitable for a wide range of high-voltage power applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive electronics
Lighting and renewable energy systems
Product Lifecycle
This product is currently in production and widely available
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and rugged design for long-term performance
Suitable for a variety of high-voltage applications
Wide operating temperature range and fast switching speed
Cost-effective solution for power conversion needs