Manufacturer Part Number
FQP6N90C
Manufacturer
onsemi
Introduction
The FQP6N90C is a high-voltage, high-power N-channel MOSFET transistor from onsemi. It is designed for a wide range of power switching and control applications.
Product Features and Performance
High drain-source voltage rating of 900V
Low on-resistance of 2.3Ω @ 3A, 10V
Continuous drain current of 6A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1770pF @ 25V
High power dissipation of 167W at Tc
Product Advantages
Excellent for high-voltage, high-power switching applications
Low on-resistance enables efficient power conversion
Wide temperature range suitable for harsh environments
Robust design with high voltage and current handling capabilities
Key Technical Parameters
Drain-Source Voltage (Vdss): 900V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2.3Ω @ 3A, 10V
Continuous Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 1770pF @ 25V
Power Dissipation (Pd): 167W @ Tc
Quality and Safety Features
RoHS3 compliant
Robust TO-220-3 package
Compatibility
Suitable for a wide range of power switching and control applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial controls
Product Lifecycle
Currently in production
Replacement or upgrade options available from onsemi
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range
Robust design in industry-standard TO-220-3 package
RoHS3 compliance for environmentally-friendly applications