Manufacturer Part Number
FQP6N80C
Manufacturer
onsemi
Introduction
High voltage N-channel power MOSFET in a TO-220-3 package
Product Features and Performance
High voltage rating of 800V
Low on-resistance of 2.5Ω
Continuous drain current of 5.5A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1310pF
High power dissipation of 158W
Product Advantages
Excellent high voltage switching performance
Efficient power conversion
Reliable operation in high temperature environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 800V
Maximum Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2.5Ω @ 2.75A, 10V
Continuous Drain Current (Id): 5.5A at 25°C
Input Capacitance (Ciss): 1310pF @ 25V
Power Dissipation (Tc): 158W
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for through-hole mounting
Compatibility
Suitable for a wide range of high voltage, high power applications
Application Areas
Switched-mode power supplies
Motor drives
Induction heating
High voltage power conversion circuits
Product Lifecycle
Current product offering
Replacement options and upgrades may be available
Key Reasons to Choose This Product
Excellent high voltage performance
Low on-resistance for efficient power conversion
High power handling capability
Reliable operation in demanding environments
RoHS compliance for environmental responsibility
FQP6N50CFairchild SemiconductorMOSFET N-CH 500V 5.5A TO220-3