Manufacturer Part Number
FQP6N60C
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Designed for high-power switching and amplifier applications
Low on-resistance and fast switching
Suitable for use in high-voltage, high-current circuits
Product Advantages
Excellent power handling capability
Fast switching speeds
Low conduction losses
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Current Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C ~ 150°C (TJ)
Compatibility
Through Hole mounting
TO-220-3 package
Application Areas
High-power switching and amplifier circuits
Industrial and automotive power electronics
Welding equipment
Motor drives
Switch-mode power supplies
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available from onsemi.
Key Reasons to Choose This Product
Excellent power handling capabilities
Fast switching speeds for efficient power conversion
Low conduction losses for improved energy efficiency
Robust design and wide operating temperature range
Compatibility with common power electronics circuits and applications