Manufacturer Part Number
FQD6N60CTM
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
600V Drain to Source Voltage (Vdss)
2Ω Maximum On-State Resistance (Rds(on)) at 2A, 10V
4A Continuous Drain Current (Id) at 25°C
810pF Maximum Input Capacitance (Ciss) at 25V
80W Maximum Power Dissipation at Tc
Product Advantages
ROHS3 Compliant
Wide Operating Temperature Range: -55°C to 150°C
Surface Mount Packaging (TO-252, D-Pak)
Key Technical Parameters
Vgs (Max): ±30V
Vgs(th) (Max) @ 250A: 4V
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ 10V: 20nC
Quality and Safety Features
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) Technology
Robust and Reliable Design
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Suitable for use in power supply, motor control, and other power electronics applications
Product Lifecycle
Currently available product
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
High voltage capability (600V Vdss)
Low on-state resistance (2Ω Rds(on))
High current handling (4A Id)
Wide operating temperature range (-55°C to 150°C)
ROHS3 compliant design
Surface mount packaging for easy integration
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