Manufacturer Part Number
FQD6N50CTM
Manufacturer
Fairchild (onsemi)
Introduction
This product is a discrete semiconductor device, specifically a transistor - FET, MOSFET - Single.
Product Features and Performance
N-Channel MOSFET
Maximum Drain-Source Voltage: 500V
Maximum Gate-Source Voltage: ±30V
Typical On-Resistance: 1.2Ω @ 2.25A, 10V
Continuous Drain Current: 4.5A @ 25°C (Tc)
Input Capacitance: 700pF @ 25V
Power Dissipation: 2.5W (Ta), 61W (Tc)
Operating Temperature: -55°C to 150°C (TJ)
Gate Charge: 25nC @ 10V
Product Advantages
High blocking voltage
Low on-resistance
High current handling capability
Wide operating temperature range
Surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 500V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 1.2Ω @ 2.25A, 10V
Current Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Quality and Safety Features
MOSFET technology for reliable operation
Surface mount package for compact design
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Power conversion and control
Switching applications
Motor control
Industrial and consumer electronics
Product Lifecycle
This product is an active and available part from the manufacturer.
Replacement or upgraded options may be available in the future.
Key Reasons to Choose This Product
High blocking voltage for high-power applications
Low on-resistance for efficient power handling
High current capability for demanding applications
Wide operating temperature range for versatile use
Surface mount package for compact design integration
Reliable MOSFET technology for long-lasting performance
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