Manufacturer Part Number
FQD6N50CTM
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor designed for a variety of power conversion and control applications
Product Features and Performance
Drain-to-source voltage (Vdss) of 500V
On-state resistance (RdsOn) of 1.2Ω @ 2.25A, 10V
Continuous drain current (Id) of 4.5A at 25°C case temperature
Input capacitance (Ciss) of 700pF @ 25V
Power dissipation of 2.5W at 25°C ambient temperature, 61W at 25°C case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
High voltage and low on-state resistance for efficient power conversion
Surface mount packaging for easy integration
Robust design for reliable operation
Key Technical Parameters
N-channel MOSFET
Drain-to-source voltage (Vdss): 500V
Gate-to-source voltage (Vgs): ±30V
On-state resistance (RdsOn): 1.2Ω @ 2.25A, 10V
Continuous drain current (Id): 4.5A at 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Suitable for industrial, consumer, and automotive applications
Compatibility
TO-252-3 (DPak) package
Tape and reel packaging
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
No information on discontinuation or replacement plans
Key Reasons to Choose This Product
High voltage and low on-state resistance for efficient power conversion
Robust design for reliable operation in a wide temperature range
Surface mount packaging for easy integration
RoHS3 compliance for use in various applications