Manufacturer Part Number
FQD6N60CTM
Manufacturer
onsemi
Introduction
The FQD6N60CTM is a high-performance N-channel power MOSFET from onsemi, designed for a variety of power switching applications.
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 2Ω @ 2A, 10V
Continuous drain current of 4A at 25°C
Fast switching speed with low input capacitance of 810pF
Wide operating temperature range of -55°C to 150°C
Robust design with 80W power dissipation capability
Product Advantages
Excellent efficiency and thermal management
Reliable performance in harsh environments
Versatile application across various power electronics
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 810pF @ 25V
Power Dissipation (Ptot): 80W
Quality and Safety Features
Robust TO-252-3 (DPak) surface mount package
Designed and manufactured to high quality standards
Compliance with relevant safety and reliability standards
Compatibility
Suitable for a wide range of power electronics applications
Compatible with various control and driver circuits
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Lighting and LED drivers
Household appliances
Product Lifecycle
The FQD6N60CTM is an active and currently available product
Replacements and upgrades may be available as technology evolves
Key Reasons to Choose This Product
High efficiency and low power losses for improved system performance
Reliable operation in harsh environments
Versatile design for diverse power electronics applications
Robust package and quality assurance for long-term reliability
Availability and compatibility with existing systems
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