Manufacturer Part Number
FGD3N60LSDTM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance IGBT transistor for power electronics applications
Product Features and Performance
Power rating up to 40W
Voltage rating up to 600V
Current rating up to 6A
Low on-state voltage (1.5V at 3A)
Fast switching with reverse recovery time of 234ns
Low gate charge of 12.5nC
High pulse current capability up to 25A
Product Advantages
Efficient power conversion
High reliability
Easy to drive and integrate
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 6A
On-state Voltage (Max): 1.5V
Reverse Recovery Time: 234ns
Gate Charge: 12.5nC
Quality and Safety Features
Robust TO-252 (D-Pak) package
ESD protection
Compliance with industry standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production
Replacement or upgraded models may be available in the future
Several Key Reasons to Choose This Product
High efficiency and low power loss
Fast switching for improved system performance
Compact and easy-to-use package
Reliable operation and long lifetime
Suitable for a broad range of power electronics applications
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