Manufacturer Part Number
FGD3N60LSDTM
Manufacturer
onsemi
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) for power conversion and motor control applications
Product Features and Performance
High blocking voltage of 600V
Low on-state voltage drop of 1.5V at 10V gate drive and 3A collector current
Fast switching with reverse recovery time of 234ns
Low gate charge of 12.5nC for efficient switching
High pulsed collector current of 25A
Product Advantages
Excellent efficiency and reliability in power conversion and motor control circuits
Compact surface mount package for high-density designs
Optimized for high-frequency switching applications
Key Technical Parameters
Power Dissipation: 40W
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 6A
Collector Current Pulsed (Max): 25A
Switching Energy: 250μJ (on), 1mJ (off)
Turn-on/off Delay Time: 40ns/600ns
Quality and Safety Features
RoHS3 compliant
Housed in a reliable TO-252AA package
Compatibility
Designed for use in various power conversion and motor control applications
Application Areas
Inverters
Converters
Motor drives
Uninterruptible power supplies (UPS)
Industrial equipment
Product Lifecycle
This product is currently in production and available for purchase.
No information on discontinuation or replacement at this time.
Key Reasons to Choose This Product
High efficiency and reliability for power conversion and motor control
Fast switching and low losses for high-frequency applications
Compact surface mount package for space-constrained designs
Proven performance and quality from onsemi
FGD3N60LSDFairchild (onsemi)