FGD3N60LSDTM - onsemi

Manufacturer Part Number

FGD3N60LSDTM

Manufacturer

onsemi

Introduction

High-performance IGBT (Insulated Gate Bipolar Transistor) for power conversion and motor control applications

Product Features and Performance

High blocking voltage of 600V

Low on-state voltage drop of 1.5V at 10V gate drive and 3A collector current

Fast switching with reverse recovery time of 234ns

Low gate charge of 12.5nC for efficient switching

High pulsed collector current of 25A

Product Advantages

Excellent efficiency and reliability in power conversion and motor control circuits

Compact surface mount package for high-density designs

Optimized for high-frequency switching applications

Key Technical Parameters

Power Dissipation: 40W

Collector-Emitter Breakdown Voltage: 600V

Collector Current (Max): 6A

Collector Current Pulsed (Max): 25A

Switching Energy: 250μJ (on), 1mJ (off)

Turn-on/off Delay Time: 40ns/600ns

Quality and Safety Features

RoHS3 compliant

Housed in a reliable TO-252AA package

Compatibility

Designed for use in various power conversion and motor control applications

Application Areas

Inverters

Converters

Motor drives

Uninterruptible power supplies (UPS)

Industrial equipment

Product Lifecycle

This product is currently in production and available for purchase.

No information on discontinuation or replacement at this time.

Key Reasons to Choose This Product

High efficiency and reliability for power conversion and motor control

Fast switching and low losses for high-frequency applications

Compact surface mount package for space-constrained designs

Proven performance and quality from onsemi