FGD5T120SH - onsemi

Manufacturer Part Number

FGD5T120SH

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors IGBTs Single

Product Features and Performance

RoHS3 Compliant

TO-252AA package

Operating Temperature: -55°C to 150°C

Power Rating: 69W

IGBT Type: Trench Field Stop

Collector-Emitter Breakdown Voltage: 1200V

Collector Current (Max): 10A

Collector-Emitter Saturation Voltage: 3.6V @ 15V, 5A

Gate Charge: 6.7nC

Pulsed Collector Current: 12.5A

Switching Energy: 247μJ (on), 94μJ (off)

Turn-On/Turn-Off Delay Time: 4.8ns/24.8ns

Product Advantages

High voltage and current capabilities

Low conduction and switching losses

Fast switching speed

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200V

Current Collector (Ic) (Max): 10A

Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A

Gate Charge: 6.7nC

Current Collector Pulsed (Icm): 12.5A

Switching Energy: 247μJ (on), 94μJ (off)

Td (on/off) @ 25°C: 4.8ns/24.8ns

Quality and Safety Features

RoHS3 Compliant

TO-252AA package

Compatibility

Surface Mount Mounting Type

Application Areas

Suitable for a wide range of power conversion and control applications, such as motor drives, power supplies, and industrial controls.

Product Lifecycle

This product is currently available and not nearing discontinuation.

Key Reasons to Choose This Product

High voltage and current capabilities

Low conduction and switching losses

Fast switching speed

RoHS3 compliant

TO-252AA surface mount package