Manufacturer Part Number
FGD5T120SH
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
RoHS3 Compliant
TO-252AA package
Operating Temperature: -55°C to 150°C
Power Rating: 69W
IGBT Type: Trench Field Stop
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Max): 10A
Collector-Emitter Saturation Voltage: 3.6V @ 15V, 5A
Gate Charge: 6.7nC
Pulsed Collector Current: 12.5A
Switching Energy: 247μJ (on), 94μJ (off)
Turn-On/Turn-Off Delay Time: 4.8ns/24.8ns
Product Advantages
High voltage and current capabilities
Low conduction and switching losses
Fast switching speed
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 10A
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A
Gate Charge: 6.7nC
Current Collector Pulsed (Icm): 12.5A
Switching Energy: 247μJ (on), 94μJ (off)
Td (on/off) @ 25°C: 4.8ns/24.8ns
Quality and Safety Features
RoHS3 Compliant
TO-252AA package
Compatibility
Surface Mount Mounting Type
Application Areas
Suitable for a wide range of power conversion and control applications, such as motor drives, power supplies, and industrial controls.
Product Lifecycle
This product is currently available and not nearing discontinuation.
Key Reasons to Choose This Product
High voltage and current capabilities
Low conduction and switching losses
Fast switching speed
RoHS3 compliant
TO-252AA surface mount package
FGD3245G2_F085Fairchild (onsemi)