FGD3N60UNDF - onsemi

Manufacturer Part Number

FGD3N60UNDF

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product - Transistors - IGBTs - Single

Product Features and Performance

600V Collector-Emitter Breakdown Voltage

6A Collector Current

52V Collector-Emitter Saturation Voltage @ 15V, 3A

21ns Reverse Recovery Time

6nC Gate Charge

9A Pulsed Collector Current

Product Advantages

Optimized for fast switching and high efficiency applications

Rugged and reliable NPT IGBT design

Small TO-252AA (DPak) surface mount package

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 6A

Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A

Reverse Recovery Time (trr): 21ns

Gate Charge: 1.6nC

Current Collector Pulsed (Icm): 9A

Switching Energy: 52J (on), 30J (off)

Td (on/off) @ 25°C: 5.5ns/22ns

Quality and Safety Features

RoHS3 Compliant

Operating Temperature Range: -55°C to 150°C (TJ)

Compatibility

Surface Mount TO-252AA (DPak) Package

Application Areas

Switch Mode Power Supplies

Motor Drives

Welding Equipment

Induction Heating

Other High-Frequency, High-Efficiency Power Conversion Applications

Product Lifecycle

Current product, no discontinuation or end-of-life plans.

Key Reasons to Choose This Product

Optimized for fast switching and high efficiency

Rugged and reliable NPT IGBT design

Small surface mount package for high density designs

RoHS3 compliant for environmentally conscious applications

Wide operating temperature range for harsh environments