Manufacturer Part Number
FGD3N60UNDF
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product - Transistors - IGBTs - Single
Product Features and Performance
600V Collector-Emitter Breakdown Voltage
6A Collector Current
52V Collector-Emitter Saturation Voltage @ 15V, 3A
21ns Reverse Recovery Time
6nC Gate Charge
9A Pulsed Collector Current
Product Advantages
Optimized for fast switching and high efficiency applications
Rugged and reliable NPT IGBT design
Small TO-252AA (DPak) surface mount package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 6A
Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A
Reverse Recovery Time (trr): 21ns
Gate Charge: 1.6nC
Current Collector Pulsed (Icm): 9A
Switching Energy: 52J (on), 30J (off)
Td (on/off) @ 25°C: 5.5ns/22ns
Quality and Safety Features
RoHS3 Compliant
Operating Temperature Range: -55°C to 150°C (TJ)
Compatibility
Surface Mount TO-252AA (DPak) Package
Application Areas
Switch Mode Power Supplies
Motor Drives
Welding Equipment
Induction Heating
Other High-Frequency, High-Efficiency Power Conversion Applications
Product Lifecycle
Current product, no discontinuation or end-of-life plans.
Key Reasons to Choose This Product
Optimized for fast switching and high efficiency
Rugged and reliable NPT IGBT design
Small surface mount package for high density designs
RoHS3 compliant for environmentally conscious applications
Wide operating temperature range for harsh environments
