FDFMA3N109 - Fairchild Semiconductor

Manufacturer Part Number

FDFMA3N109

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

PowerTrench MOSFET

N-Channel

Schottky Diode (Isolated)

Operating Temperature: -55°C to 150°C

Drain to Source Voltage (Vdss): 30V

Gate Voltage (Vgs) (Max): ±12V

On-State Resistance (Rds On) (Max): 123mΩ @ 2.9A, 4.5V

Continuous Drain Current (Id) (Max): 2.9A (Tc)

Input Capacitance (Ciss) (Max): 220pF @ 15V

Power Dissipation (Max): 1.5W (Ta)

Gate Charge (Qg) (Max): 3nC @ 4.5V

Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Product Advantages

High-performance PowerTrench MOSFET

Low on-state resistance

Compact 6-VDFN Exposed Pad package

Suitable for a wide range of applications

Key Technical Parameters

Manufacturer Part Number: FDFMA3N109

Package: 6-VDFN Exposed Pad

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Threshold Voltage (Vgs(th)) (Max): 1.5V @ 250μA

Mounting Type: Surface Mount

Quality and Safety Features

Complies with industry standards for quality and safety

Compatibility

Suitable for a wide range of electronic applications

Application Areas

Power management

Motor control

Switching circuits

Industrial electronics

Product Lifecycle

Current product offering

No planned discontinuation

Replacements and upgrades available as needed

Key Reasons to Choose This Product

High-performance PowerTrench MOSFET technology

Low on-state resistance for efficient power switching

Compact and thermally-enhanced package

Wide operating temperature range

Suitable for a variety of power management and control applications