FDFMA2P857 - onsemi

Manufacturer Part Number

FDFMA2P857

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

P-Channel MOSFET with Schottky Diode

Operates in -55°C to 150°C temperature range

20V Drain-Source Voltage (Vdss)

3A Continuous Drain Current (Id) at 25°C

120mΩ maximum On-Resistance (Rds(on)) at 3A, 4.5V

435pF maximum Input Capacitance (Ciss) at 10V

6nC maximum Gate Charge (Qg) at 4.5V

4W maximum Power Dissipation at 25°C

Product Advantages

Efficient power handling

Wide temperature range

Compact 6-VDFN Exposed Pad package

Key Technical Parameters

Voltage: Vdss = 20V, Vgs(max) = ±8V

Current: Id(max) = 3A

Resistance: Rds(on)(max) = 120mΩ

Capacitance: Ciss(max) = 435pF

Gate Charge: Qg(max) = 6nC

Quality and Safety Features

MOSFET technology for reliable performance

Schottky diode for fast switching

Compatibility

Surface mount package for easy integration

Application Areas

Power management circuits

Switching applications

Portable electronics

Product Lifecycle

Currently available

No discontinuation or upgrades announced

Key Reasons to Choose

Efficient power handling

Wide temperature range operation

Compact size and easy integration

Reliable MOSFET technology with Schottky diode