Manufacturer Part Number
FDFMA2P853
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
20V Drain-Source Voltage (Vdss)
±8V Gate-Source Voltage (Vgs)
120mΩ On-Resistance (Rds(on)) at 3A, 4.5V
3A Continuous Drain Current (Id) at 25°C
435pF Input Capacitance (Ciss) at 10V
Schottky Diode (Isolated)
4W Power Dissipation (Max) at 25°C
3V Gate Threshold Voltage (Vgs(th)) at 250μA
6nC Gate Charge (Qg) at 4.5V
Product Advantages
Low On-Resistance for improved efficiency
High Current Capability
Isolated Schottky Diode
Key Technical Parameters
Voltage Ratings: Vdss = 20V, Vgs = ±8V
Current Rating: Id = 3A at 25°C
On-Resistance: Rds(on) = 120mΩ at 3A, 4.5V
Power Dissipation: 1.4W at 25°C
Quality and Safety Features
RoHS3 Compliant
-55°C to 150°C Operating Temperature Range
Compatibility
Surface Mount Packaging (6-VDFN Exposed Pad)
Application Areas
Power Management
Motor Control
Switching Circuits
Product Lifecycle
Current production, no discontinuation planned
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
High current capability for demanding applications
Isolated Schottky diode for improved circuit design
Wide operating temperature range for reliability
Surface mount packaging for compact designs