Manufacturer Part Number
FDFMA3N109
Manufacturer
onsemi
Introduction
N-channel power MOSFET transistor
Product Features and Performance
30V drain-source voltage
123mOhm maximum on-resistance
9A continuous drain current
220pF maximum input capacitance
5W maximum power dissipation
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power switching
Low on-resistance
Compact 6-MicroFET (2x2) surface mount package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-source voltage (Vdss): 30V
Gate-source voltage (Vgs): ±12V
On-resistance (Rds(on)): 123mOhm
Continuous drain current (Id): 2.9A
Input capacitance (Ciss): 220pF
Quality and Safety Features
RoHS3 compliant
Schottky diode feature
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
DC-DC converters
Power amplifiers
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
Efficient power switching performance
Low on-resistance for reduced power losses
Compact surface mount package
Wide operating temperature range
Suitable for high-frequency switching applications