FDD7N25LZTM - Fairchild Semiconductor

Manufacturer Part Number

FDD7N25LZTM

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

TO-252, (D-Pak) package

TO-252-3, DPak (2 Leads + Tab), SC-63 package

UniFET series

Bulk packaging

Operating temperature range: -55°C to 150°C (TJ)

Drain to Source Voltage (Vdss): 250 V

Maximum Gate-Source Voltage (Vgs): ±20 V

Maximum On-State Resistance (Rds On): 550 mOhm @ 3.1A, 10V

MOSFET (Metal Oxide) technology

Continuous Drain Current (Id) @ 25°C: 6.2A (Tc)

Maximum Input Capacitance (Ciss): 635 pF @ 25 V

Maximum Power Dissipation: 56W (Tc)

N-Channel FET type

Maximum Gate-Source Threshold Voltage (Vgs(th)): 2V @ 250A

Drive Voltage: 5V (Max Rds On), 10V (Min Rds On)

Maximum Gate Charge (Qg): 16 nC @ 10 V

Surface Mount mounting type

Product Advantages

High voltage rating

Low on-state resistance

High continuous drain current

Wide operating temperature range

Compact surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 250 V

Maximum Gate-Source Voltage (Vgs): ±20 V

On-State Resistance (Rds On): 550 mOhm @ 3.1A, 10V

Continuous Drain Current (Id) @ 25°C: 6.2A (Tc)

Input Capacitance (Ciss): 635 pF @ 25 V

Power Dissipation: 56W (Tc)

Gate-Source Threshold Voltage (Vgs(th)): 2V @ 250A

Gate Charge (Qg): 16 nC @ 10 V

Quality and Safety Features

Robust TO-252, (D-Pak) package

Wide operating temperature range

Compatibility

Surface mount applications

Application Areas

Power switching circuits

Motor control

Inverters

DC-DC converters

Battery chargers

Product Lifecycle

Current production

Several Key Reasons to Choose This Product

High voltage rating (250 V)

Low on-state resistance (550 mOhm)

High continuous drain current (6.2A)

Wide operating temperature range (-55°C to 150°C)

Compact surface mount package

Suitable for a variety of power electronics applications