Manufacturer Part Number
FDD7N20TM
Manufacturer
onsemi
Introduction
High-performance MOSFET transistor for power management and switching applications
Product Features and Performance
High drain-source breakdown voltage of 200V
Low on-resistance of 690 mΩ
Continuous drain current capability of 5A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 6.7 nC
Surface mount package (TO-252-3)
Product Advantages
Excellent power efficiency and energy savings
Robust and reliable performance
Compact and space-saving design
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 690 mΩ @ 2.5A, 10V
Continuous Drain Current (Id): 5A @ 25°C
Input Capacitance (Ciss): 250 pF @ 25V
Power Dissipation (Pd): 43W @ Tc
Quality and Safety Features
RoHS3 compliant
Tested for reliability and safety
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Industrial controls
Telecommunications equipment
Automotive electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement parts and upgrades available
Key Reasons to Choose This Product
High power efficiency and energy savings
Reliable and robust performance
Compact and space-saving design
Wide operating temperature range
Fast switching speed and low gate charge
RoHS3 compliance for environmental sustainability
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