FDD7N60NZTM - onsemi

Manufacturer Part Number

FDD7N60NZTM

Manufacturer

onsemi

Introduction

The FDD7N60NZTM is a high-voltage, high-power N-channel MOSFET transistor from onsemi. It is designed for high-efficiency power conversion applications.

Product Features and Performance

600V Drain-Source Voltage

5A Continuous Drain Current at 25°C

25Ω Maximum On-Resistance at 2.75A, 10V

730pF Maximum Input Capacitance at 25V

90W Maximum Power Dissipation at Tc

Wide Operating Temperature Range of -55°C to 150°C

Product Advantages

High-voltage and high-power handling capability

Low on-resistance for high efficiency

Compact TO-252-3 (DPak) package

Suitable for various power conversion applications

Key Technical Parameters

Drain-Source Voltage (Vdss): 600V

Maximum Gate-Source Voltage (Vgs): ±25V

Drain Current (Id): 5.5A at 25°C

On-Resistance (Rds(on)): 1.25Ω at 2.75A, 10V

Input Capacitance (Ciss): 730pF at 25V

Power Dissipation (Pd): 90W at Tc

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for surface mount applications

Application Areas

Switching power supplies

Motor drives

Power factor correction circuits

Inverters

Converters

Product Lifecycle

Current product, not nearing discontinuation

Replacement or upgrade options may be available

Several Key Reasons to Choose This Product

High-voltage and high-power handling capabilities

Low on-resistance for efficient power conversion

Compact and surface-mountable package

Wide operating temperature range

Designed and manufactured to high quality standards