Manufacturer Part Number
FDD8424H
Manufacturer
onsemi
Introduction
Discrete semiconductor product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
N and P-Channel MOSFET
40V Drain to Source Voltage (Vdss)
24mOhm Rds On (Max) @ Id, Vgs
9A Continuous Drain (Id) @ 25°C
1000pF Input Capacitance (Ciss) (Max) @ Vds
Logic Level Gate FET
3V Vgs(th) (Max) @ Id
20nC Gate Charge (Qg) (Max) @ Vgs
Product Advantages
High power handling capacity
Low on-state resistance
Suitable for high-frequency, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Continuous Drain (Id) @ 25°C: 9A, 6.5A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 1.3W
Compatibility
Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Application Areas
High-frequency, high-power applications
Switch-mode power supplies
Motor drives
Automotive electronics
Product Lifecycle
Current product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High power handling capacity
Low on-state resistance
Suitable for high-frequency, high-power applications
RoHS3 compliant
Wide operating temperature range