Manufacturer Part Number
FDD6N25TM
Manufacturer
Fairchild (onsemi)
Introduction
This product is a discrete semiconductor device, specifically a single transistor - MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
Product Features and Performance
N-Channel MOSFET
250V Drain to Source Voltage
±30V Gate to Source Voltage
1Ω On-Resistance at 2.2A, 10V
4A Continuous Drain Current at 25°C
250pF Input Capacitance at 25V
50W Power Dissipation
-55°C to 150°C Operating Temperature Range
Surface Mount Packaging (TO-252AA)
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Surface mount packaging for compact design
Key Technical Parameters
Drain to Source Voltage (Vdss): 250V
Gate to Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.1Ω @ 2.2A, 10V
Drain Current (Id): 4.4A (Tc)
Input Capacitance (Ciss): 250pF @ 25V
Power Dissipation (Pd): 50W (Tc)
Quality and Safety Features
MOSFET technology for reliable and safe operation
Adherence to industry standards and safety regulations
Compatibility
Suitable for a wide range of power electronics and power conversion applications
Application Areas
Switched-mode power supplies
Motor drives
Lighting controls
Industrial automation and control systems
Product Lifecycle
This product is an active and widely available MOSFET solution.
Replacements and upgrades are readily available from the manufacturer and other sources.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding power applications
Low on-resistance for efficient power conversion and low heat dissipation
Wide operating temperature range for use in diverse environmental conditions
Surface mount packaging for compact and space-efficient design
Reliable MOSFET technology and adherence to industry standards
Availability of replacements and upgrades for long-term product support
