FDD6N50TM - onsemi

Manufacturer Part Number

FDD6N50TM

Manufacturer

onsemi

Introduction

N-channel power MOSFET in a TO-252AA (DPak) package

Designed for high-voltage, high-current switching applications

Product Features and Performance

High-voltage rating of 500V

Low on-resistance of 900mΩ (max) at 3A, 10V

High continuous drain current of 6A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching speed and low gate charge of 16.6nC (max) at 10V

Product Advantages

Excellent for high-voltage, high-current applications

Efficient power conversion with low conduction losses

Wide temperature capability enables use in harsh environments

Small package size and surface-mount design for compact designs

Key Technical Parameters

Drain-Source Voltage (Vdss): 500V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 900mΩ (max) at 3A, 10V

Continuous Drain Current (Id): 6A at 25°C

Input Capacitance (Ciss): 9400pF (max) at 25V

Power Dissipation (Ptot): 89W at Tc

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Compatible with a wide range of high-voltage, high-current applications

Application Areas

Switch-mode power supplies

Motor drives

Lighting ballasts

Inverters and converters

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and not nearing discontinuation

Replacement or upgrade options are available if needed

Key Reasons to Choose This Product

High voltage and current handling capability

Low on-resistance for efficient power conversion

Wide temperature range for use in harsh environments

Small package size and surface-mount design for compact designs

Reliable performance and quality construction