FDD6N25TM - onsemi

Manufacturer Part Number

FDD6N25TM

Manufacturer

onsemi

Introduction

The FDD6N25TM is a high-performance N-channel MOSFET transistor from onsemi. It is designed for a wide range of power switching applications.

Product Features and Performance

250V drain-source voltage rating

Low on-resistance of 1.1Ω at 2.2A, 10V

4A continuous drain current at 25°C

50W power dissipation rating at 25°C

Input capacitance of 250pF at 25V

Gate charge of 6nC at 10V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Efficient power switching performance

High voltage and current handling capabilities

Low conduction losses

Compact TO-252 package

Key Technical Parameters

Drain-Source Voltage (Vdss): 250V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 1.1Ω @ 2.2A, 10V

Continuous Drain Current (Id): 4.4A @ 25°C

Power Dissipation (Pd): 50W @ 25°C

Input Capacitance (Ciss): 250pF @ 25V

Gate Charge (Qg): 6nC @ 10V

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

Surface mount TO-252 package

Suitable for a wide range of power switching applications

Application Areas

Power supplies

Motor drives

Switching regulators

Inverters

Industrial and consumer electronics

Product Lifecycle

The FDD6N25TM is an active and widely available product from onsemi.

Several Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for efficient power switching

Compact and reliable TO-252 package

Suitable for a wide range of power electronics applications

Backed by onsemi's quality and reliability standards