Manufacturer Part Number
FDD6N25TM
Manufacturer
onsemi
Introduction
The FDD6N25TM is a high-performance N-channel MOSFET transistor from onsemi. It is designed for a wide range of power switching applications.
Product Features and Performance
250V drain-source voltage rating
Low on-resistance of 1.1Ω at 2.2A, 10V
4A continuous drain current at 25°C
50W power dissipation rating at 25°C
Input capacitance of 250pF at 25V
Gate charge of 6nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power switching performance
High voltage and current handling capabilities
Low conduction losses
Compact TO-252 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.1Ω @ 2.2A, 10V
Continuous Drain Current (Id): 4.4A @ 25°C
Power Dissipation (Pd): 50W @ 25°C
Input Capacitance (Ciss): 250pF @ 25V
Gate Charge (Qg): 6nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Surface mount TO-252 package
Suitable for a wide range of power switching applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Industrial and consumer electronics
Product Lifecycle
The FDD6N25TM is an active and widely available product from onsemi.
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Compact and reliable TO-252 package
Suitable for a wide range of power electronics applications
Backed by onsemi's quality and reliability standards
